FDS2670

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FDS2670

Part number:

FDS2670

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 200V 3A 8SOIC

Encapsulation:

Cut Tape (CT)

Packing:

SO-8

Quantity

5689

RoHS status:

PDF：

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Quantity

Price

Total price

$2.62

$1.73

$17.3

100

$1.2

$120

500

$1.01

$505

1000

$1.01

$1010

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

8-SOIC

Drain to Source Voltage (Vdss)

200 V

Power Dissipation (Max)

2.5W (Ta)

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Rds On (Max) @ Id, Vgs

130mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

1228 pF @ 100 V

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SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com