FDP61N20

Home page Product Center

FDP61N20

Part number:

FDP61N20

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 200V 61A TO220-3

Encapsulation:

Tube

Packing:

TO-220

Quantity

2275

RoHS status:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

$1.58

$1.42

$71

100

$1.41

$141

500

$1.37

$685

1000

$1.33

$1330

2000

$1.26

$2520

Obtain quotation information

Product parameters

Mounting Type

Through Hole

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

Grade

Qualification

Package / Case

TO-220-3

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

TO-220-3

Drain to Source Voltage (Vdss)

200 V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Vgs (Max)

±30V

Vgs(th) (Max) @ Id

5V @ 250µA

Power Dissipation (Max)

417W (Tc)

Gate Charge (Qg) (Max) @ Vgs

75 nC @ 10 V

Rds On (Max) @ Id, Vgs

41mOhm @ 30.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds

3380 pF @ 25 V

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

onsemi

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com