FDN352AP

Home page Product Center

FDN352AP

Part number:

FDN352AP

Product Category:

Manufacturer:

onsemi

Description:

MOSFET P-CH 30V 1.3A SUPERSOT3

Encapsulation:

Cut Tape (CT)

Packing:

SOT23

Quantity

52842

RoHS status:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

$0.65

$0.45

$4.5

100

$0.31

$31

500

$0.24

$120

1000

$0.21

$210

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

FET Feature

Grade

Qualification

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

FET Type

P-Channel

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 155°C (TJ)

Power Dissipation (Max)

500mW (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Drain to Source Voltage (Vdss)

30 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

150 pF @ 15 V

Rds On (Max) @ Id, Vgs

180mOhm @ 1.3A, 10V

Gate Charge (Qg) (Max) @ Vgs

1.9 nC @ 4.5 V

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

onsemi

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com