FDD3860

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FDD3860

Part number:

FDD3860

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 100V 6.2A DPAK

Encapsulation:

Cut Tape (CT)

Packing:

TO-252

Quantity

6298

RoHS status:

PDF：

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Quantity

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Quantity

Price

Total price

$1.64

$1.19

$11.9

100

$0.81

$81

500

$0.65

$325

1000

$0.59

$590

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs

31 nC @ 10 V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Supplier Device Package

TO-252AA

Power Dissipation (Max)

3.1W (Ta), 69W (Tc)

Rds On (Max) @ Id, Vgs

36mOhm @ 5.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds

1740 pF @ 50 V

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