FDD10N20LZTM

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FDD10N20LZTM

Part number:

FDD10N20LZTM

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 200V 7.6A DPAK

Encapsulation:

Tape & Reel (TR)

Packing:

TO-252

Quantity

1600

RoHS status:

NO

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Product parameters

Part Status

Obsolete

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

200 V

Gate Charge (Qg) (Max) @ Vgs

16 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Supplier Device Package

TO-252AA

Power Dissipation (Max)

83W (Tc)

Rds On (Max) @ Id, Vgs

360mOhm @ 3.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds

585 pF @ 25 V

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