FCA35N60

Home page Product Center

FCA35N60

Part number:

FCA35N60

Product Category:

Manufacturer:

onsemi

Description:

MOSFET N-CH 600V 35A TO3PN

Encapsulation:

Tube

Packing:

TO-247

Quantity

1600

RoHS status:

NO

Share:

PDF：

Price inquiry

Product parameters

Part Status

Obsolete

Mounting Type

Through Hole

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

600 V

Package / Case

TO-3P-3, SC-65-3

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Vgs (Max)

±30V

Vgs(th) (Max) @ Id

5V @ 250µA

Supplier Device Package

TO-3PN

Gate Charge (Qg) (Max) @ Vgs

181 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

6640 pF @ 25 V

Rds On (Max) @ Id, Vgs

98mOhm @ 17.5A, 10V

Power Dissipation (Max)

312.5W (Tc)

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com

Copyright@2025 All Rights Reserved Technical Support: Cluster Technology