DMN63D8LDW-7

Home page Product Center

DMN63D8LDW-7

Part number:

DMN63D8LDW-7

Product Category:

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 30V 0.22A SOT363

Encapsulation:

Cut Tape (CT)

Packing:

SOT363

Quantity

93767

RoHS status:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

$0.29

$0.17

$1.7

100

$0.11

$11

500

$0.08

$40

1000

$0.07

$70

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id

1.5V @ 250µA

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

Power - Max

300mW

Current - Continuous Drain (Id) @ 25°C

220mA

Gate Charge (Qg) (Max) @ Vgs

0.87nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

22pF @ 25V

Rds On (Max) @ Id, Vgs

2.8Ohm @ 250mA, 10V

Newest products

ZXMHC6A07N8TC

MOSFET 2N/2P-CH 60V 1.39A 8SO

Diodes Incorporated

IRF7389TRPBF

MOSFET N/P-CH 30V 8SO

Infineon Technologies

2N7002DW-7-F

MOSFET 2N-CH 60V 0.23A SOT363

Diodes Incorporated

NVDD5894NLT4G

MOSFET 2N-CH 40V 14A 5DPAK

onsemi

IRF9952TR

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

Infineon Technologies

SI7540ADP-T1-GE3

MOSFET N/P-CH 20V 12A PPAK SO8

Vishay Siliconix

FDS9945

MOSFET 2N-CH 60V 3.5A 8SOIC

onsemi

SI9945BDY-T1-GE3

MOSFET 2N-CH 60V 5.3A 8SOIC

Vishay Siliconix

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com