DMN2600UFB-7

Home page Product Center

DMN2600UFB-7

Part number:

DMN2600UFB-7

Product Category:

Manufacturer:

Diodes Incorporated

Description:

MOSFET N-CH 25V 1.3A 3DFN

Encapsulation:

Cut Tape (CT)

Packing:

SMD

Quantity

8529

RoHS status:

NO

Share:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

1

$0.18

$0.18

10

$0.06

$0.6

100

$0.05

$5

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

FET Feature

-

Grade

-

Qualification

-

Operating Temperature

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Vgs(th) (Max) @ Id

1V @ 250µA

Vgs (Max)

±8V

Power Dissipation (Max)

540mW (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Drain to Source Voltage (Vdss)

25 V

Rds On (Max) @ Id, Vgs

350mOhm @ 200mA, 4.5V

Package / Case

3-UFDFN

Supplier Device Package

X1-DFN1006-3

Gate Charge (Qg) (Max) @ Vgs

0.85 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds

70.13 pF @ 15 V

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com

Copyright@2025 All Rights Reserved Technical Support: Cluster Technology