DMN2014LHAB-7

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DMN2014LHAB-7

Part number:

DMN2014LHAB-7

Product Category:

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 20V 9A 6UDFN

Encapsulation:

Cut Tape (CT)

Packing:

SMD

Quantity

1606

RoHS status:

PDF：

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Quantity

Price

Total price

$0.88

$0.55

$5.5

100

$0.35

$35

500

$0.27

$135

1000

$0.24

$240

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Product parameters

Part Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

20V

FET Feature

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C

Vgs(th) (Max) @ Id

1.1V @ 250µA

Power - Max

800mW

Configuration

2 N-Channel (Dual) Common Drain

Package / Case

6-UFDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 10V

Supplier Device Package

U-DFN2030-6 (Type B)

Rds On (Max) @ Id, Vgs

13mOhm @ 4A, 4.5V

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SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com