DMN1019UVT-7

Home page Product Center

DMN1019UVT-7

Part number:

DMN1019UVT-7

Product Category:

Manufacturer:

Diodes Incorporated

Description:

MOSFET N-CH 12V 10.7A TSOT26

Encapsulation:

Cut Tape (CT)

Packing:

SMD

Quantity

6777

RoHS status:

PDF：

Price inquiry

Quantity

Send inquiry form

Quantity

Price

Total price

$0.56

$0.39

$3.9

100

$0.22

$22

500

$0.19

$95

1000

$0.17

$170

Obtain quotation information

Product parameters

Part Status

Active

Mounting Type

Surface Mount

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

FET Feature

Grade

Qualification

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

SOT-23-6 Thin, TSOT-23-6

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12 V

Vgs(th) (Max) @ Id

800mV @ 250µA

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Supplier Device Package

TSOT-26

Rds On (Max) @ Id, Vgs

10mOhm @ 9.7A, 4.5V

Current - Continuous Drain (Id) @ 25°C

10.7A (Ta)

Gate Charge (Qg) (Max) @ Vgs

50.4 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds

2588 pF @ 10 V

Power Dissipation (Max)

1.73W (Ta)

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

onsemi

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com