2SK1859-E

Home page Product Center

2SK1859-E

Part number:

2SK1859-E

Product Category:

Manufacturer:

Renesas Electronics Corporation

Description:

MOSFET N-CH 900V 6A TO3P

Encapsulation:

Tube

Packing:

TO-247

Quantity

1600

RoHS status:

PDF：

Price inquiry

Product parameters

Mounting Type

Through Hole

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

Grade

Qualification

Vgs(th) (Max) @ Id

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Package / Case

TO-3P-3, SC-65-3

Drain to Source Voltage (Vdss)

900 V

Vgs (Max)

±30V

Supplier Device Package

TO-3P

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Rds On (Max) @ Id, Vgs

3Ohm @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds

980 pF @ 10 V

Newest products

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies

FDD6680A

MOSFET N-CH 30V 14A/56A DPAK

onsemi

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

IRFU420

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix

STP30NF10

MOSFET N-CH 100V 35A TO220AB

STMicroelectronics

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

IRLML2502TRPBF

MOSFET N-CH 20V 4.2A SOT23

Infineon Technologies

SDES LIMITED

Address:Room 3402, Zhonghang Road Duhui Xuan, Futian District, Shenzhen

Contact number:0755-83483730 Email:president@sdes-ic.com