TSM2NB60CH

Part Number:
TSM2NB60CH
Category:
-
Description:
600V, 2A, SINGLE N-CHANNEL POWER
Encapsulation:
-
Package:
Tube
Quantity:
0
RoHS Status:
Supported
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PDF:
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MOQ: 15000

Qty Price Total
15000+ $0.33 $4950

Product Parameters

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±30V
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id 4.5V @ 250µA
Rds On (Max) @ Id, Vgs 4.4Ohm @ 1A, 10V
Supplier Device Package TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Power Dissipation (Max) 44W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 249 pF @ 25 V