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SIS862DN-T1-GE3
- Part Number:
- SIS862DN-T1-GE3
- Category:
- -
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET N-CH 60V 40A PPAK1212-8
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Quantity:
- 2005
- RoHS Status:
- Supported
MOQ: 1
| Qty | Price | Total |
|---|---|---|
| 1+ | $1.5 | $1.5 |
| 10+ | $1.05 | $10.5 |
| 100+ | $0.8 | $80 |
| 500+ | $0.63 | $315 |
| 1000+ | $0.57 | $570 |
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 20A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 30 V |
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