SIRA10BDP-T1-GE3

Part Number:
SIRA10BDP-T1-GE3
Category:
-
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 30A/60A PPAK SO8
Encapsulation:
-
Package:
Cut Tape (CT)
Quantity:
0
RoHS Status:
Supported
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MOQ: 1

Qty Price Total
1+ $1.24 $1.24
10+ $0.85 $8.5
100+ $0.56 $56
500+ $0.43 $215
1000+ $0.39 $390

Product Parameters

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36.2 nC @ 10 V
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 15 V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 10A, 10V
Vgs (Max) +20V, -16V
Power Dissipation (Max) 5W (Ta), 43W (Tc)
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 60A (Tc)