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SIR416DP-T1-GE3
- Part Number:
- SIR416DP-T1-GE3
- Category:
- -
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET N-CH 40V 50A PPAK SO-8
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Quantity:
- 1980
- RoHS Status:
- Supported
MOQ: 1
| Qty | Price | Total |
|---|---|---|
| 1+ | $1.74 | $1.74 |
| 10+ | $1.22 | $12.2 |
| 100+ | $0.89 | $89 |
| 500+ | $0.71 | $355 |
| 1000+ | $0.66 | $660 |
Product Parameters
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Power Dissipation (Max) | 5.2W (Ta), 69W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3350 pF @ 20 V |
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