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SI2312BDS-T1-GE3
- Part Number:
- SI2312BDS-T1-GE3
- Category:
- -
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET N-CH 20V 3.9A SOT23-3
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Quantity:
- 16662
- RoHS Status:
- Supported
MOQ: 1
| Qty | Price | Total |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 10+ | $0.59 | $5.9 |
| 100+ | $0.38 | $38 |
| 500+ | $0.29 | $145 |
| 1000+ | $0.26 | $260 |
Product Parameters
| Part Status | Obsolete |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Vgs (Max) | ±8V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
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