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IPD60R650CEATMA1
- Part Number:
- IPD60R650CEATMA1
- Category:
- -
- Manufacturer:
- Infineon Technologies
- Description:
- MOSFET N-CH 600V 7A TO252-3
- Encapsulation:
- -
- Package:
- Tape & Reel (TR)
- Quantity:
- 0
- RoHS Status:
- Supported
MOQ: 0
| Qty | Price | Total |
|---|---|---|
| - | ||
Product Parameters
| Part Status | Obsolete |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 600 V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Power Dissipation (Max) | 63W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.4A, 10V |
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